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Dimensional Electron Gas Uniformity of GaN HFET Layers on SiC

, : Dimensional Electron Gas Uniformity of GaN HFET Layers on SiC.

As GaN power transistor technology matures it is increasingly important to understand any links between substrate quality , epi-layer growth and electrical characteristics of the 2-dimensional electron gas (2DEG) which forms the active part of devices. We present a study which makes use of full wafer mapping techniques to examine these relationships. Substrate off-cut is shown to be an important parameter in controlling the uniformity of GaN HFET device layers on SiC substrates.GaN HFETS on SiC substrates are investigated using full wafer imaging techniques. Defects in SiC are shown to have a limited impact on the 2DEG properties. Non-uniformity in the 2DEG are related to variations in the SiC substrate off-cut angle..


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